| PART |
Description |
Maker |
| FLX257XV |
GAAS FET & HEMT CHIPS
|
Eudyna Devices Inc
|
| HMC-APH196 |
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MGF4953A11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| CF001-0308 |
GaAs Pseudomorphic HEMT Transistor
|
Mimix Broadband
|
| HMC-ALH10209 |
GaAs HEMT MMIC WIDEBAND
|
Hittite Microwave Corporation
|
| MGF4964BL |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| HMC-ABH209 |
GAAS HEMT MMIC MEDIUM POWER AMPLIFIER
|
Analog Devices
|
| HMC-ALH45910 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
